{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"680 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0037 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL"...

{"Polarity":"N","Packaging":"Rail\/Tube","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"75(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"80(V)","Drain-Source On-Res":"0.0037(ohm)","Power Dissipation":"41(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220FP","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...