Irf.com/IRF4435
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1461 Bytes - 15:57:12, 30 April 2024
Various/IRF443R
{"C(iss) Max. (F)":"1.2n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"7.5","I(D) Abs. Max.(A) Drain Curr.":"4.4","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"74n","r(DS)on Max. (Ohms)":"1.1","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"28","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"4.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...
1298 Bytes - 15:57:12, 30 April 2024