{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On R...

{"C(iss) Max. (F)":"850p","Absolute Max. Power Diss. (W)":"35","r(DS)on Max. (Ohms)":"230m","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.3","@(VDS) (V) (Test Condition)":"20","Package":"TO-220AB","I(DSS) Min. (A)":"1.0m","Military":"N","t(r) Max. (s) Rise time":"75n","V(BR)DSS (V)":"80","t(f) Max. (s) Fall time.":"45n","g(fs) Min. (S) Trans. conduct.":"5.1","I(D) Abs. Drain Current (A)":"8.0"}...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"79","g(fs) Max, (S) Trans. conduct,":"7.6","I(D) Abs. Max.(A) Drain Curr.":"8.3","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"35n","r(DS)on Max. (Ohms)":"250m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"48","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"5.1","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.3","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pack...