{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"70nC @ 10V","Product Photos":"TO-220AB","PCN Assembly\/Origin":"SIL-099-2014-Rev-0 12\/Nov\/2014","Rds On (Max) @ Id, Vgs":"180 mOhm @ 11A, 10V","Datasheets":"IRF640PBF Packaging Information","FET Type":"MOSFET N-Channel, M...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"125(W)","Continuous Drain Current":"18(A)","Mounting":"Through Hole","Operating Temp Range":"-55C to 150C","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Power MOSFET","Dimensions":"10.51 x 4.65 x 15.49 mm","Maximum Continuous Drain Current":"18 A","Width":"4.65 mm","Maximum Drain Source Voltage":"200 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 70 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"14 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"1300 pF @ 25 V","L...