{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3.4(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3.4A","Gate Charge (Qg) @ Vgs":"38nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"105 mOhm @ 3.4A, 10V","Datasheets":"IRF7342PbF","FET Type":"2 P-Channel (Dual)","PCN Packaging":"Package Drawing Updat...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Turn-Off Delay Time":"43 ns","Description":"Value","Maximum Continuous Drain Current":"3.4 A","Package":"8SOIC","Typical Turn-On Delay Time":"14 ns","Mounting":"Surface Mount","Typical Rise Time":"10 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"105@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"22 ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Turn-Off Delay Time":"43 ns","Description":"Value","Maximum Continuous Drain Current":"3.4 A","Package":"8SOIC","Typical Turn-On Delay Time":"14 ns","Mounting":"Surface Mount","Typical Rise Time":"10 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"105@10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"22 ns"}...