{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"18 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"101 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transist...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"101 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V",...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"18 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"338 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor T...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"18 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"270 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERA...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Automotive","Continuous Drain Current":"34(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2.8(W)","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MT","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.8(W)","Continuous Drain Current":"31(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Automotive","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MX","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.8(W)","Continuous Drain Current":"28(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Automotive","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MX","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.1(W)","Continuous Drain Current":"23(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Automotive","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET MX","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Power Dissipation":"74(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220-1","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 150\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MT","Gate Charge (Qg) @ Vgs":"77nC @ 4.5V","Rds On (Max) @ Id, Vgs":"1.5 mOhm @ 32A, 10V","Product Photos":"IRF6614TR1PBF","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20\/Feb\/2014","Datasheets":"IRF8301MTRPbF","FET Type":"MOSFET N-Ch...

{"Terminal Finish":"MATTE TIN","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"260 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"31 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0018 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"250 A","Channel Type":"N-CHANNEL","FET Techno...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 150\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"53nC @ 4.5V","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 31A, 10V","Product Photos":"IRF6794MTR1PBF","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20\/Feb\/2014...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 150\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"53nC @ 4.5V","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 31A, 10V","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20\/Feb\/2014","Datasheets":"IRF8302M (TR) PBF"...

{"Terminal Finish":"MATTE TIN","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"190 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"28 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0022 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"N-CHANNEL","FET Techno...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MX","Current - Continuous Drain (Id) @ 25\u00b0C":"28A (Ta), 170A (Tc)","Gate Charge (Qg) @ Vgs":"42nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.2 mOhm @ 28A, 10V","Product Photos":"IRF6794MTR1PBF","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discret...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"42nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.2 mOhm @ 28A, 10V","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20\/Feb\/2014","Datasheets":"IRF8304M (TR) PBF"...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"38nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.5 mOhm @ 23A, 10V","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20\/Feb\/2014","Datasheets":"IRF8306M(TR)PbF","...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"38nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.5 mOhm @ 23A, 10V","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20\/Feb\/2014","Datasheets":"IRF8306M(TR)PbF","...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MX","Current - Continuous Drain (Id) @ 25\u00b0C":"27A (Ta), 150A (Tc)","Gate Charge (Qg) @ Vgs":"42nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.5 mOhm @ 27A, 10V","Product Photos":"IRF6794MTR1PBF","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discret...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package \/ Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"42nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.5 mOhm @ 27A, 10V","PCN Assembly\/Origin":"DirectFET Backend Wafer Processing 23\/Oct\/2013 Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20\/Feb\/2014"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3, TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"610pF @ 25V","Series":"PowerMESH\u2122","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF830","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 2.7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"100W","Package \/ Case":"TO-220-3","Mounting Type":"Throug...

{"C(iss) Max. (F)":"800p","Absolute Max. Power Diss. (W)":"35","V(BR)DSS (V)":"500","g(fs) Max, (S) Trans. conduct,":"3.4","I(D) Abs. Max.(A) Drain Curr.":"1.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"155n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"15","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"2.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)t...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"800p","t(r) Max. (s) Rise time":"30n","I(GSS) Max. (A)":"500n","I(DSS) Min. (A)":"250u","V(BR)DSS (V)":"500","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":"2.5","I(D) Abs. Drain Current (A)":"5.0","Package":"TO-220AB","Military":"N","r(DS)on Max. (Ohms)":"1.2"}...

{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"4.2","I(D) Abs. Max.(A) Drain Curr.":"3.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"53n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"18","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"2.7","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"4.5A (Tc)","Gate Charge (Qg) @ Vgs":"38nC @ 10V","Product Photos":"TO-220AB","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 2.7A, 10V","Datasheets":"IRF830PBF Packaging Information","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1,000","Drain to Source V...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"15 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"4.5 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Packa...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configur...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"META...