{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"320 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V"...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","T...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"640 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Typ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220","Datasheets":"IRF(S)840B TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"800 mOhm @ 4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"134W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"500V","...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"320 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Typ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"8(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Power Dissipation":"125(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"8 A","Mounting":"Through Hole","Noise Figure":"Not Required dB","Drain-Source On-Volt":"500 V","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Power Dissipation":"125 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Output Power (Max)":"Not Required W","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3, TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"832pF @ 25V","Series":"PowerMESH\u2122 II","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF840","Rds On (Max) @ Id, Vgs":"850 mOhm @ 3.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Package \/ Case":"TO-220-3","Mounting Type":"Th...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"1.6n","t(r) Max. (s) Rise time":"15n","I(GSS) Max. (A)":"500n","I(DSS) Min. (A)":"250u","V(BR)DSS (V)":"500","t(f) Max. (s) Fall time.":"30n","g(fs) Min. (S) Trans. conduct.":"4.0","I(D) Abs. Drain Current (A)":"8.9","Package":"TO-220AB","Military":"N","r(DS)on Max. (Ohms)":"680m"}...

{"C(iss) Max. (F)":"1.2n","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"7.4","I(D) Abs. Max.(A) Drain Curr.":"5.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"74n","r(DS)on Max. (Ohms)":"850m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"4.9","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"4.4","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Pac...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Other Names":"*IRF840 IRF840IR","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRF840PBF Packaging Information","Power - Max":"125W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole","...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Ma...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configurat...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"MET...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...