{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"435 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"180","V(BR)DSS (V)":"400","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"10","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"110n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"64","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)t...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"300 mOhm @ 9.6A, 10V","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Other Names":"*IRFP350","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP350","Power - Max":"190W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"4...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2200pF @ 25V","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Datasheets":"IRFP350LC","Rds On (Max) @ Id, Vgs":"300 mOhm @ 9.6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"190W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Tc)","Gate Charge (Qg) @ Vgs":"76nC @ 10V","Product Photos":"TO-247-3","Rds On (Max) @ Id, Vgs":"300 mOhm @ 9.6A, 10V","Datasheets":"IRFP350LC","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"500","Drain to Source Voltage (Vdss)":"400V","Online Ca...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Tc)","Gate Charge (Qg) @ Vgs":"150nC @ 10V","Product Photos":"TO-247-3","PCN Assembly\/Origin":"SIL-003-2014-Rev-0 14\/Feb\/2014","Rds On (Max) @ Id, Vgs":"300 mOhm @ 9.6A, 10V","Datasheets":"IRFP350","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package"...

{"Category":"Power MOSFET","Dimensions":"15.87 x 5.31 x 20.82\n \n mm","Maximum Continuous Drain Current":"16\n \n A","Width":"5.31\n \n mm","Maximum Drain Source Voltage":"400\n \n V","Package Type":"TO-247AC","Number of Elements per Chip":"1","Co...

{"Category":"Power MOSFET","Dimensions":"15.87 x 5.31 x 20.82 mm","Maximum Continuous Drain Current":"16 A","Width":"5.31 mm","Maximum Drain Source Voltage":"400 V","Package Type":"TO-247AC","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 150 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"16 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"2600 pF @ 25 V","...