{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-3PN","Datasheets":"IRFP450B","Rds On (Max) @ Id, Vgs":"390 mOhm @ 7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"205W","Package \/ Case":"TO-3P-3, SC-65-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"500V","Current...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"14(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Power Dissipation":"190(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247AC","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 8.4A, 10V","FET Feature":"Standard","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-247AD","Other Names":"IRFP450X","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP450","Power - Max":"190W","Package \/ Case":"TO-3P-3 Full Pack","Mounting Type":"Through Hole","Drain to Source Voltage...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Number of Ter...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2000pF @ 25V","Series":"PowerMESH\u2122 II","Standard Package":"30","Supplier Device Package":"TO-247-3","Datasheets":"IRFP450","Rds On (Max) @ Id, Vgs":"380 mOhm @ 7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"190W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"760 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...

{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"180","V(BR)DSS (V)":"500","g(fs) Max, (S) Trans. conduct,":"13.8","I(D) Abs. Max.(A) Drain Curr.":"8.8","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"56","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"9.3","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"7.9","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(G...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"14A (Tc)","Gate Charge (Qg) @ Vgs":"150nC @ 10V","Product Photos":"TO-247-3","Rds On (Max) @ Id, Vgs":"400 mOhm @ 8.4A, 10V","Datasheets":"IRFP450","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"500","Drain to Source Voltage (Vdss)":"500V","PCN Obsole...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 8.4A, 10V","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Other Names":"*IRFP450A","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP450A","Power - Max":"190W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"14A (Tc)","Gate Charge (Qg) @ Vgs":"64nC @ 10V","Product Photos":"TO-247-3","PCN Assembly\/Origin":"SIL-003-2014-Rev-0 14\/Feb\/2014","Rds On (Max) @ Id, Vgs":"400 mOhm @ 8.4A, 10V","Datasheets":"IRFP450A","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package"...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"400 mOhm @ 8.4A, 10V","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Other Names":"*IRFP450LC","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFP450LC","Power - Max":"190W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2200pF @ 25V","Series":"-","Standard Package":"500","Supplier Device Package":"TO-247-3","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Datasheets":"IRFP450LC","Rds On (Max) @ Id, Vgs":"400 mOhm @ 8.4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"190W","Package \/...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2260pF @ 25V","Series":"-","Standard Package":"25","Supplier Device Package":"TO-247-3","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Datasheets":"IRFP450N,SiHFP450N","Rds On (Max) @ Id, Vgs":"370 mOhm @ 8.4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Pa...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IRFP Series Side 1 IRFP Series Side 2","Package \/ Case":"TO-247-3","Current - Continuous Drain (Id) @ 25\u00b0C":"14A (Tc)","Gate Charge (Qg) @ Vgs":"150nC @ 10V","Product Photos":"TO-247-3","PCN Assembly\/Origin":"SIL-003-2014-Rev-0 14\/Feb\/2014","Rds On (Max) @ Id, Vgs":"400 mOhm @ 8.4A, 10V","Datasheets":"IRFP450","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package"...

{"Category":"Power MOSFET","Dimensions":"15.87 x 5.31 x 20.82 mm","Maximum Continuous Drain Current":"14 A","Width":"5.31 mm","Maximum Drain Source Voltage":"500 V","Package Type":"TO-247AC","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 64 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"15 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"2038 pF @ 25 V","L...

{"Category":"Power MOSFET","Dimensions":"15.87 x 5.31 x 20.82 mm","Maximum Continuous Drain Current":"14 A","Width":"5.31 mm","Maximum Drain Source Voltage":"500 V","Package Type":"TO-247AC","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 150 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"17 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"2600 pF @ 25 V","...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"EOL\/LIFEBUY","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...