Infineon.com/IRFR024NTRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"45(W)","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1516 Bytes - 22:06:00, 28 April 2024
Irf.com/IRFR024NTRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"17A (Tc)","Gate Charge (Qg) @ Vgs":"20nC @ 10V","Product Photos":"TO-252-3","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"75 mOhm @ 10A, 10V","Datasheets":"IRF(R,U)024NPbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Pa...
2000 Bytes - 22:06:00, 28 April 2024