{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"18(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Rail\/Tube","Power Dissipation":"1000(W)","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.9V @ 100\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"18A (Tc)","Gate Charge (Qg) @ Vgs":"29nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Mosfet Backend Wafer Processing 23\/Oct\/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"105 mOhm @ 11A, 10V","Datasheets"...