{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"11(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail\/Tube","Power Dissipation":"38(W)","Operating Temp Range":"-55C to 150C","Package Type":"IPAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CH...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRFR9024NTRPBF Saber Model IRFR9024NTRPBF Spice Model","Product Photos":"DPAK_369D\u221201","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"75","Supplier Device Package":"I-Pak","Datasheets":"IRFR\/U9024N","Rds On (Max) @ Id, Vgs":"175 mOhm @ 6.6A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"38W","Other Names":"*IRFU9024N...

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"62 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CH...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-251-3 Long Leads, IPak, TO-251AB","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Tc)","Gate Charge (Qg) @ Vgs":"19nC @ 10V","Product Photos":"DPAK_369D\u221201","PCN Design\/Specification":"Leadframe Update 02\/Jun\/2015 Leadframe Retraction 03\/Jun\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"175 mOhm @...