Infineon.com/IRLR3410TRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"79(W)","Continuous Drain Current":"17(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1518 Bytes - 07:55:01, 03 May 2024
Irf.com/IRLR3410TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"17A (Tc)","Gate Charge (Qg) @ Vgs":"34nC @ 5V","Product Photos":"TO-252-3","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"105 mOhm @ 10A, 10V","Datasheets":"IRLR\/U3410Pb...
2042 Bytes - 07:55:01, 03 May 2024
Irf.com/IRLR3410TRPBF-EL
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"53 ns","Typical Turn-Off Delay Time":"30 ns","Description":"Value","Maximum Continuous Drain Current":"17 A","Package":"3DPAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b116 V","Typical Turn-On Delay Time":"7.2 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"105@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"26 ns"}...
1400 Bytes - 07:55:01, 03 May 2024