{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 1mA","Series":"HiPerFET\u2122, PolarP2\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(H,V)12N100P\/PS","Rds On (Max) @ Id, Vgs":"1.05 Ohm @ 6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"463W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Vol...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"1000(V)","Power Dissipation":"463(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247AD","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"750 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.05 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL...