{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXFH12N120","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"500W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1200V (1...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"IXXH50N60C3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 1mA","Series":"HiPerFET\u2122, PolarP2\u2122","Standard Package":"30","Supplier Device Package":"TO-247AD (IXFH)","Datasheets":"IXF(H,V)12N120P\/S","Rds On (Max) @ Id, Vgs":"1.35 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"543W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12(A)","Mounting":"Through Hole","Drain-Source On-Volt":"1200(V)","Power Dissipation":"543(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"N-CHANNEL","F...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.35 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL...