{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-264","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 4mA","Series":"HiPerFET\u2122, PolarP2\u2122","Standard Package":"25","Supplier Device Package":"TO-264AA (IXFK)","Datasheets":"IXF(K,X)180N15P IXFx180N15P","Rds On (Max) @ Id, Vgs":"11 mOhm @ 90A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"830W","Package \/ Case":"TO-264-3, TO-264AA","Mounting Type":"Through Hole","Drain ...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"830(W)","Continuous Drain Current":"180(A)","Mounting":"Through Hole","Drain-Source On-Volt":"150(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"TO-264AA","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"4000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0110 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"380 A","Channel Type":"N-CH...