{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-227-4, miniBLOC","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"4V @ 8mA","Series":"HiPerFET\u2122","Standard Package":"10","Supplier Device Package":"SOT-227B","Datasheets":"IXF(K,N)73N30","Rds On (Max) @ Id, Vgs":"45 mOhm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"520W","Package \/ Case":"SOT-227-4, miniBLOC","Mounting Type":"Chassis Mount","Drain to Source Voltage ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT-227-4, miniBLOC","Family":"FETs - Modules","Vgs(th) (Max) @ Id":"4V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"10","Supplier Device Package":"SOT-227B","Datasheets":"IXFN73N30Q","Rds On (Max) @ Id, Vgs":"45 mOhm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"500W","Package \/ Case":"SOT-227-4, miniBLOC","Mounting Type":"Chassis Mount","Drain to Source Voltage (Vd...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"520(W)","Continuous Drain Current":"73(A)","Mounting":"Screw","Drain-Source On-Volt":"300(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-227B","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"4","Number of Elements":"1"}...

{"Terminal Finish":"NICKEL","Terminal Form":"UNSPECIFIED","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...

{"Terminal Finish":"NICKEL","Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET T...