{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 1.5mA","Series":"HiPerFET\u2122","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IXF(A,P)3N120","Rds On (Max) @ Id, Vgs":"4.5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Package \/ Case":"TO-220-3","Mounting Type":"Through Hole","Dra...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"200(W)","Continuous Drain Current":"3(A)","Mounting":"Through Hole","Drain-Source On-Volt":"1200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"PURE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Tech...