{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"60A","Switching Energy":"270\u00b5J (on), 90\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"3V @ 15V, 20A","Td (on\/off) @ 25\u00b0C":"16ns\/42ns","Input Type":"Standard","Package \/ Case":"TO-247-3","Gate Charge":"38nC","Product Photos":"IXXH50N60C3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"25ns","Datasheets":"GenX3 600V IGBTs Overview IXG(H,T)30N60C3D1 IXGx30N60C3D1","Standard Package":"30"...

{"Collector Current (DC) ":"60(A)","Operating Temperature (Min)":"-55C","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-247","Configuration":"Single","Pin Count":"3 +Tab"}...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Turn-off Time-Nom (toff)":"160 ns","Collector Current-Max (IC)":"60 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"45 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Transist...