{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-247 (IXTH)","Datasheets":"IXTH3N150","Rds On (Max) @ Id, Vgs":"7.3 Ohm @ 1.5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"250W","Package \/ Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1500V (1.5kV)","Current...

{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"250 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"9 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1500 V","T...