IDT70V658S12BFGI8 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
From Integrated Device Technology
| Status | ACTIVE |
| Access Time-Max (tACC) | 12 ns |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Memory Density | 2.36E6 deg |
| Memory IC Type | DUAL-PORT SRAM |
| Memory Width | 36 |
| Mfr Package Description | 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208 |
| Number of Functions | 1 |
| Number of Terminals | 208 |
| Number of Words | 65536 words |
| Number of Words Code | 64K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 64K X 36 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 3.45 V |
| Supply Voltage-Min (Vsup) | 3.15 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
