BBY55-02WE6433
18.6 pF, 16 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

From Infineon Technologies AG

StatusACTIVE
Breakdown Voltage-Min16 V
ConfigurationSINGLE
Diode Cap Tolerance5.66 %
Diode Capacitance Ratio-Min2
Diode Capacitance-Nom (Cd)18.6 pF
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Mfr Package DescriptionSCD-80, 2 PIN
Number of Elements1
Number of Terminals2
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormFLAT
Terminal PositionDUAL
Variable Capacitance Diode ClassificationHYPERABRUPT

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