BSM50GD120DN2 IGBT Modules 1200V 50A FL BRIDGE
From Infineon Technologies
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Configuration | Hex |
| Continuous Collector Current at 25 C | 72 A |
| Factory Pack Quantity | 500 |
| Gate-Emitter Leakage Current | 200 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 40 C |
| Mounting Style | Screw |
| Package / Case | EconoPACK 2A |
| Pd - Power Dissipation | 350 W |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| RoHS | Details |
