BSP88
0.35 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET

From Infineon Technologies AG

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
China RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min240 V
Drain Current-Max (ID)0.3500 A
Drain-source On Resistance-Max6 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionROHS COMPLIANT, SOT-223, 4 PIN
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max1.8 W
Pulsed Drain Current-Max (IDM)1.4 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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