BSS816NWH6327XTSA1 MOSFET N-Ch 20V 1.4A SOT-323-3
From Infineon Technologies
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Factory Pack Quantity | 3000 |
| Fall Time | 2.2 ns |
| Id - Continuous Drain Current | 1.4 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-323-3 |
| Packaging | Reel |
| Part # Aliases | SP000917562 |
| Pd - Power Dissipation | 500 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | 0.2 nC |
| Rds On - Drain-Source Resistance | 160 mOhms |
| Rise Time | 9 ns |
| RoHS | Details |
| Series | BSS816 |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 11 ns |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Breakdown Voltage | 8 V |
| Vgs th - Gate-Source Threshold Voltage | 300 mV to 750 mV |
