BUZ30A-E3045
21 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Infineon Technologies AG

StatusACTIVE
Avalanche Energy Rating (Eas)450 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)21 A
Drain-source On Resistance-Max0.1300 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-220AB, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)84 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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