HYB514100BJ50 General Purpose Dynamic RAM - 35ns page mode cycle time
From Infineon Technologies
| Bits Per Word | 1 |
| Military | N |
| Nom. Supp (V) | 5.0 |
| Number of Words | 4M |
| Output Config | 3-State |
| P(D) Max.(W) Power Dissipation | 660m |
| Package | SOJ-20/26 |
| Pins | 26 |
| Technology | CMOS |
| t(acc) Max. (S) | 50n |
| tW Min (S) | 95n |
