IHW20N135R3FKSA1 IGBT Transistors IGBT PRODUCTS
From Infineon Technologies
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1.35 kV |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Continuous Collector Current Ic Max | 20 A |
| Continuous Collector Current at 25 C | 40 A |
| Factory Pack Quantity | 240 |
| Gate-Emitter Leakage Current | 100 nA |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part # Aliases | SP000909532 |
| Pd - Power Dissipation | 155 W |
| Product Category | IGBT Transistors |
| RoHS | Details |
| Series | IHW20N135 |
