IPA65R190E6 MOSFET N-CH 650V 20.2A TO220
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Datasheets | IPx65R190E6 |
| Drain to Source Voltage (Vdss) | 650V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 73nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1620pF @ 100V |
| Mounting Type | Through Hole |
| Other Names | IPA65R190E6XKSA1 SP000863904 |
| PCN Assembly/Origin | Fab/Test Site Transfer 28/May/2015 |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Tube |
| Power - Max | 34W |
| Product Photos | TO-220AB |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.3A, 10V |
| Series | CoolMOS™ |
| Standard Package | 500 |
| Supplier Device Package | PG-TO220 Full Pack |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
