IPB010N06N MOSFET N-CH 60V 45A TO263-7
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta), 180A (Tc) |
| Datasheets | IPB010N06N |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 208nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 15000pF @ 30V |
| Mounting Type | Surface Mount |
| Other Names | IPB010N06NATMA1 IPB010N06NTR SP000917410 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Packaging | Tape & Reel (TR) |
| Power - Max | 300W |
| Product Photos | TO-263-7, D2Pak |
| Rds On (Max) @ Id, Vgs | 1 mOhm @ 100A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1,000 |
| Supplier Device Package | PG-TO263-7 |
| Vgs(th) (Max) @ Id | 4V @ 280µA |
