IPB010N06NATMA1 MOSFET N-Ch 60V 180A D2PAK-6
From Infineon Technologies
| Brand | Infineon Technologies |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 23 ns |
| Forward Transconductance - Min | 310 S |
| Id - Continuous Drain Current | 180 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-7 |
| Packaging | Reel |
| Part # Aliases | SP000917410 |
| Pd - Power Dissipation | 300 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 208 nC |
| Rds On - Drain-Source Resistance | 1 mOhms |
| Rise Time | 36 ns |
| RoHS | Details |
| Series | IPB010N06 |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 74 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
