IPB026N06NATMA1 MOSFET N-Ch 60V 100A D2PAK-2
From Infineon Technologies
| Brand | Infineon Technologies |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 8 ns |
| Forward Transconductance - Min | 160 S |
| Id - Continuous Drain Current | 100 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 |
| Packaging | Reel |
| Part # Aliases | SP000962142 |
| Pd - Power Dissipation | 136 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 56 nC |
| Rds On - Drain-Source Resistance | 2.6 mOhms |
| Rise Time | 15 ns |
| RoHS | Details |
| Series | IPB026N06 |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 30 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.8 V |
