IPB050N06N G MOSFET N-CH 60V 100A TO-263
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Datasheets | IPB,IPP050N06N G |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 167nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 6100pF @ 30V |
| Mounting Type | Surface Mount |
| Other Names | IPB050N06NGINDKR |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Digi-Reel® |
| Power - Max | 300W |
| Product Photos | TO-263 |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 100A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TO263-2 |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
