IPB093N04L G
MOSFET N-CH 40V 50A TO263-3

From Infineon Technologies

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C50A (Tc)
DatasheetsIPB093N04L G
Drain to Source Voltage (Vdss)40V
FET FeatureLogic Level Gate
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs28nC @ 10V
Input Capacitance (Ciss) @ Vds2100pF @ 20V
Mounting TypeSurface Mount
Other NamesIPB093N04L GDKR
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PackagingDigi-Reel®
Power - Max47W
Product PhotosTO-263
Rds On (Max) @ Id, Vgs9.3 mOhm @ 50A, 10V
SeriesOptiMOS™
Standard Package1
Supplier Device PackagePG-TO263-2
Vgs(th) (Max) @ Id2V @ 16µA

External links