IPB64N25S320ATMA1 MOSFET N-CH 250V 64A TO263-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Datasheets | IPB64N25S3-20 |
| Drain to Source Voltage (Vdss) | 250V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 89nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 7000pF @ 25V |
| Mounting Type | * |
| Other Names | IPB64N25S320ATMA1DKR |
| Package / Case | * |
| Packaging | * |
| Power - Max | 300W |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 64A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | * |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
