IPD25N06S4L-30 MOSFET N-CH 60V 25A TO252-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Datasheets | IPD25N06S4L-30 |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 16.3nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1220pF @ 25V |
| Mounting Type | * |
| Other Names | IPD25N06S4L-30DKR |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Package / Case | * |
| Packaging | * |
| Power - Max | 29W |
| Product Photos | TO252-3 |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 25A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | * |
| Vgs(th) (Max) @ Id | 2.2V @ 8µA |
