IPD30N06S2-15 MOSFET N-CH 55V 30A TO252-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Datasheets | IPD30N06S2-15 |
| Drain to Source Voltage (Vdss) | 55V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1485pF @ 25V |
| Mounting Type | Surface Mount |
| Other Names | IPD30N06S2-15-ND IPD30N06S215 IPD30N06S215ATMA1 SP000252160 |
| PCN Assembly/Origin | Wafer Fab/Test Site Addition 16/Oct/2014 Wafer Fab/Test Site Addition 15/Dec/2014 |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 136W |
| Product Photos | TO252-3 |
| Rds On (Max) @ Id, Vgs | 14.7 mOhm @ 30A, 10V |
| Series | OptiMOS™ |
| Standard Package | 2,500 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
