IPD60R380P6ATMA1
MOSFET N-CH 600V DPAK-3

From Infineon Technologies

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C10.6A (Tc)
DatasheetsIPx60R380P6
Drain to Source Voltage (Vdss)600V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs19nC @ 10V
Input Capacitance (Ciss) @ Vds877pF @ 100V
Mounting Type*
Other NamesIPD60R380P6ATMA1DKR
Package / Case*
Packaging*
Power - Max83W
Rds On (Max) @ Id, Vgs380 mOhm @ 3.8A, 10V
SeriesCoolMOS™ P6
Standard Package1
Supplier Device Package*
Vgs(th) (Max) @ Id4.5V @ 320µA

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