IPD65R380E6ATMA1 MOSFET N-CH 650V 10.6A TO252
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
| Datasheets | IPx65R380E6 |
| Drain to Source Voltage (Vdss) | 650V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 710pF @ 100V |
| Mounting Type | Surface Mount |
| Other Names | SP001117736 |
| PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 83W |
| Product Photos | TO252-3 |
| Product Training Modules | CoolMOS™ CP High Voltage MOSFETs Converters |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 10V |
| Series | CoolMOS™ E6 |
| Standard Package | 2,500 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
