IPI100N06S3L-03 MOSFET N-CH 55V 100A TO-262
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Datasheets | IPB(I,P)100N06S3L-03 |
| Drain to Source Voltage (Vdss) | 55V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 550nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 26240pF @ 25V |
| Mounting Type | Through Hole |
| Other Names | IPI100N06S3L-03-ND IPI100N06S3L-03IN IPI100N06S3L03X IPI100N06S3L03XK SP000087979 |
| PCN Obsolescence/ EOL | Multiple Devices 22/Jul/2010 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Packaging | Tube |
| Power - Max | 300W |
| Product Photos | TO-262-3 |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 80A, 10V |
| Series | OptiMOS™ |
| Standard Package | 500 |
| Supplier Device Package | PG-TO262-3 |
| Vgs(th) (Max) @ Id | 2.2V @ 230µA |
