IPP029N06NAKSA1 MOSFET N-Ch 60V 100A TO220-3
From Infineon Technologies
Brand | Infineon Technologies |
Configuration | Single |
Factory Pack Quantity | 500 |
Fall Time | 8 ns |
Forward Transconductance - Min | 160 S |
Id - Continuous Drain Current | 100 A |
Manufacturer | Infineon |
Maximum Operating Temperature | + 175 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Packaging | Tube |
Part # Aliases | SP000917404 |
Pd - Power Dissipation | 136 W |
Product Category | MOSFET |
Qg - Gate Charge | 56 nC |
Rds On - Drain-Source Resistance | 2.9 mOhms |
Rise Time | 15 ns |
RoHS | Details |
Series | IPP029N06 |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Typical Turn-Off Delay Time | 30 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Breakdown Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.8 V |