IPP65R099C6XKSA1
MOSFET N-CH 650V 38A TO220

From Infineon Technologies

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C38A (Tc)
DatasheetsIPx65R099C6
Drain to Source Voltage (Vdss)650V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs15nC @ 10V
Input Capacitance (Ciss) @ Vds2780pF @ 100V
Mounting TypeThrough Hole
Online CatalogN-Channel Standard FETs
Package / CaseTO-220-3
PackagingTube
Power - Max278W
Product PhotosTO-220-3
Rds On (Max) @ Id, Vgs99 mOhm @ 12.8A, 10V
SeriesCoolMOS™
Standard Package500
Supplier Device PackageTO-220-3
Vgs(th) (Max) @ Id3.5V @ 1.2mA

External links