IPS65R1K5CEAKMA1 MOSFET N-CH 650V TO-251-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Datasheets | IPS65R1K5CE |
| Drain to Source Voltage (Vdss) | 650V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| For Use With | EVALLEDICL8201F2-ND - REFERENCE DESIGN ICL8201 T8 |
| Gate Charge (Qg) @ Vgs | 10.5nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 225pF @ 100V |
| Mounting Type | Through Hole |
| Online Catalog | N-Channel Standard FETs |
| Other Names | SP001276050 |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Packaging | Tube |
| Power - Max | 28W |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1A, 10V |
| Series | CoolMOS™ CE |
| Standard Package | 1,500 |
| Supplier Device Package | TO-251 |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
