SPD09P06PLG
9.7 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AB

From Infineon Technologies AG

StatusACTIVE
Avalanche Energy Rating (Eas)70 mJ
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)9.7 A
Drain-source On Resistance-Max0.2500 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionGREEN, PLASTIC, TO-252, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)38.8 A
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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