2N6784TX
2.25 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

From International Rectifier

StatusDISCONTINUED
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)2.25 A
Drain-source On Resistance-Max1.5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Pulsed Drain Current-Max (IDM)9 A
Terminal FinishTIN LEAD
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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