2N6798EDPBF
200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

From International Rectifier

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min200 V
Drain-source On Resistance-Max0.4000 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Terminal FinishNOT SPECIFIED
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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