2N6800EC
400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

From International Rectifier

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min400 V
Drain-source On Resistance-Max1 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Terminal FinishTIN LEAD
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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