2N7269
N-Channel Enhancement MOSFET - HEXFET. Radiation hard. 1 X 10-6 Rads.

From International Rectifier

@(VDS) (V) (Test Condition)20
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)16
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)12
Absolute Max. Power Diss. (W)150
C(iss) Max. (F)4.7n
I(D) Abs. Drain Current (A)26
I(D) Abs. Max.(A) Drain Curr.16
I(DM) Max (A)(@25°C)104
I(DSS) Min. (A)25u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-254AA
Thermal Resistance Junc-Amb.48
V(BR)DSS (V)200
V(BR)GSS (V)20
V(GS)th Max. (V)4.0
V(GS)th Min. (V)2.0
g(fs) Min. (S) Trans. conduct.8.0
r(DS)on Max. (Ohms)100m
t(d)off Max. (s) Off time140n
t(f) Max. (s) Fall time.140n
t(r) Max. (s) Rise time140n
td(on) Max (s) On time delay33n

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