FSPYC264R3
45 A, 250 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusDISCONTINUED
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)45 A
Drain-source On Resistance-Max0.0460 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionCERAMIC, LCC-3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Pulsed Drain Current-Max (IDM)160 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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