FSYC360D1 21 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET
From International Rectifier
Status | DISCONTINUED |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 400 V |
Drain Current-Max (ID) | 21 A |
Drain-source On Resistance-Max | 0.2100 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | SMD2, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | CHIP CARRIER |
Pulsed Drain Current-Max (IDM) | 63 A |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | NO LEAD |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |